Remaining switched on to silicon-based electronics

To verify their simulation results, the researchers

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fabricated their IGBT with a rated voltage of 3300 V in a specialized clean room at The University of Tokyo and then assessed its performance. Notably, the IGBT achieved stable switching at an operating voltage of just 5 V. This represents the first time IGBT switching has been realized at 5 V.

An IGBT that exhibits stable performance at an operating voltage of just 5 V is extremely attractive because the power consumption of the drive circuit is only around 10% of that of a conventional IGBT operating at 15 V. Power conversion efficiency is also improved despite the lowered operation voltage. Such a low operating voltage is also compatible with standard electronics processing, which will aid the integration of the IGBT drive circuits with other electronics.

"IGBTs are important power electronics components," explains Toshiro Hiramoto. "Our miniaturized IGBT could lead to the further development of advanced power electronics that are smaller and have higher power conversion efficiency."

IGBTs are found in electronics ranging from electric trainsand vehicles to home stereos and air conditioners. Therefore, the improved IGBT with low driving voltage and high power conversion efficiency shows promise to raise the performance of numerous electronics, helping to mitigate modern society's increasing energy demands.

https://phys.org/news/2019-06-silicon-based-electronics.html